TOP FOURIER OPTICS
TOP FOURIER OPTICS ECE 510
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This 3 page Class Notes was uploaded by Miss Chadrick Doyle on Tuesday September 1, 2015. The Class Notes belongs to ECE 510 at Portland State University taught by James McNames in Fall. Since its upload, it has received 17 views. For similar materials see /class/168230/ece-510-portland-state-university in ELECTRICAL AND COMPUTER ENGINEERING at Portland State University.
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Date Created: 09/01/15
Between Failure Reliability Yield and IC Layout ECE 510 Device Reliability Spring 2003 Lecture 2 Failure Malgorzata ChrzanowskaJeske Electrical and Computer Engineering Portland State University 510 Reliabilig r Leemre 2 Slide 1 FUNDAlVlENTAL DEFINITIONS I Failure 0 The deviation of the system from the behavior that is described in its speci cation I Error 0 The part of the state which is incorrect I Fault 0 An error in the internal states of the components of a system or in the design of the system I Defect Unintended physical difference between hardware implementation and its intended design 510 Reliawa r Leemre 2 Slide 2 Levels of Abstraction Higher Level lgtl LogicCi PhysicalChemical 14 Lower Level 510 Reliabiligy 7 Lecture 2 Slide 3 Categories of Defects Oxidation front end process 39 Metallization backend process 39 Overstress 39 Others 5101951 in rLecmre 21 Slide 4 Oxidation Related Defects Thin oxide gate oxide Hot electron injection gt VT shift Oxide breakdown gate oxide shorts Ionic contamination parametric change Thick oxide Ionic contamination 510 Reliabilirv Lecture 21 Slide 5 Oxidation Related Defects V w mummy 4 ns H max I 39 LI 7 tun 488 f OI H l ll INN IINM Stress lime min 15 Threshold voltage shift measured for VDS 01V as a function of hotelectron stress time for hydrogen and deuterium annealed NMOS devices sluRetiubuiqy Lcuure 2 SW2 6 Hot Electron Injection Hot electron Injection Carriers gain high energy from sourcedrain potential drop hot electrons are able to cross the energy barrier or SiOxide interface and trapped in oxide More evident in nMOS hot holes in pMOS Failure modes of hot election injection VT shift Transconductance changed 5m Reiiubitigv Lecture 2 Slide 7 Oxidation Related Defects mn q I I v H mum DS 4 H MU 101M Slress time min Channel transconductance normalized values as a function of hotelectron stress time measured in H2 or D2 annealed NMOS devices Sl Rzliabilig Lecture 2 SW2 8
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