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## ece 311 post lab sample 7

by: bmatthew Notetaker

25

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# ece 311 post lab sample 7 ECE 311

Marketplace > Clemson University > Electrical Engineering > ECE 311 > ece 311 post lab sample 7
bmatthew Notetaker
Clemson

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## About this Document

BJT Common-Emitter Circuit Voltage Gain
COURSE
PROF.
Ali Pezeshki
TYPE
Class Notes
PAGES
4
WORDS
KARMA
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## Popular in Electrical Engineering

This 4 page Class Notes was uploaded by bmatthew Notetaker on Friday March 11, 2016. The Class Notes belongs to ECE 311 at Clemson University taught by Ali Pezeshki in Spring 2016. Since its upload, it has received 25 views. For similar materials see in Electrical Engineering at Clemson University.

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Date Created: 03/11/16
Post Lab 7: BJT Common­Emitter Circuit Voltage Gain Proposal: This experiment is designed to illustrate how the voltage gain of a CE bipolar transistor circuit  can be changed by changing the bias of the circuit and by changing the values of the resistors  in the circuit. Experimental Procedure: For the experiment you will require:   1 NPN transistor, either 2N3904, 2N2222, or equivalent  1 Curve tracer  1 Decade resistance box  NI-ELVIS workstation  Resistors and capacitors as noted in the schematic.  Linear graph paper or graphing software (e.g., Excel or MatLab). For part I: Establishing the proper Q-point (1),Use the curve tracer and measure the β of the transistor at a collector current of about 1.0mA and VCE of about 5 V. Set I MAX= 20 ma, V MAX= 10V, use the 2N3904 transistor for this part of the experiment. Β of 2N3904 transistor is 190. (2), Set up the circuit as shown in Figure 1 with VCC = 10.0V. Use the DMM to measure V aC0 V E0.nd we get Vco=5.16V, V =1.EOV. Figure 1: Common-emitter circuit for Q-point measurement. For part II: AC Measurements (1),Build the circuit shown in Figure 2 for ac measurements by adding the capacitors (use 47µF) and sinusoidal input of 2VP-P 1kHz applied to the voltage divider circuit, RS1 and RS2. Measure O and VSwith the oscilloscope(with capacitor, CEand without capacitor, CE). Measure VOwhile RC is varied from 1kΩ to 20kΩ using the resistance decade box. Determine the voltage gain, AV= V OVS. Figure 2: The common emitter circuit of Figure 7.2 with added capacitors and an input signal VS provided by the function generator and the voltage divider, RS1 and RS2. Table 1: O vs RC: Rc With (Ω) C E Without C E Output Output wavefor wavefor V O- m VO- m (V) shape A (V) shape A PP V PP V Sinusoid 39.705 0.043 1.2791 1k 1.35 al 88 49 flat 18 Sinusoid 118.82 0.120 Sinusoi 3.4428 3k 4.04 al 35 5 dal 57 119.42 0.236 Sinusoi 6.7657 6k 4.18 clipping 86 8 dal 14 158.51 9k 4.28 clipping 85 0.038 clipping 1.1875 127.39 0.009 0.2987 15k 2.93 clipping 13 32 flat 18 94.495 0.013 0.4467 20k 2.06 clipping 41 85 flat 74 (3), Set C = 3.9 kΩ using a fixed resistor instead of the resistance decade box. Connect the emitter bypass capacitor E as shown Figure 2. WithCR = 3.9 kΩ and E connected and without C , measure V and V for R values from 200 Ω and 10kΩ. E O S E Table 2: O vs C : RE(Ω) With CE Without CE Output Output wavefo wavefo VO- rm V O- rm PPV) shape AV PPV) shape A V 0.100 clippin 4.104 clippin 140.22 200 16 g 918 3.298 g 11 0.257 Sinusoi 7.499 clippin 150.89 500 98 dal 419 4.904 g 23 0.132 Sinusoi 3.835 Sinusoi 127.38 1K 13 dal 414 4.573 dal 16 0.047 1.368 Sinusoi 50.914 3K 16 Flat 94 1.782 dal 29 0.025 0.709 0.936 Sinusoi 26.366 6K 11 Flat 522 02 dal 76 0.018 0.540 0.711 Sinusoi 20.504 8K 67 Flat 376 5 dal 32 0.016 0.466 0.572 Sinusoi 16.631 10K 09 Flat 377 13 dal 69 (5) Set E to 1kΩ and connect E as shown in Figure 2. Vary the input signal frequency from 10 Hz to 50k Hz and use the oscilloscope to see how the magnitude of the output signal varies. Table 3: Frequency response of O-PPd voltage gain AV. Freque ncy (Hz) 10 100 1K 10K 25K 50K 230.65 1.610 4.547 4.737 4.688 4.495 VO-PP mV V V V V V 34.56 34.56 35.83 34.75 31.78 22.02 AV mV mV mV mV mV mV Conclusions: From this experiment, we can learn how the value of the resistor Rc and RE affect the Input  voltage shape and amplitude,and the voltage gain, A . Vhich we can design special function  circuits better in the future.

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