Analog Electronics EE 321
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This 4 page Class Notes was uploaded by Ms. Isobel Rau on Thursday October 15, 2015. The Class Notes belongs to EE 321 at New Mexico Institute of Mining and Technology taught by Staff in Fall. Since its upload, it has received 39 views. For similar materials see /class/223650/ee-321-new-mexico-institute-of-mining-and-technology in Electrical Engineering at New Mexico Institute of Mining and Technology.
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Date Created: 10/15/15
FAIRGHILD SEMICONDUCTOR m TP32 SeriesTP32I32AI3ZBI3ZC Medium Power Linear Switching Applications Complement to TP3131A31B31C 1 TO220 1Base 2Coector 3Emitter PN P Epitaxial Silicon Transistor Absolute Maximum Ratings Tc25 C unless otherwise noted Symbol Parameter Value Units VCBO CollectorBase Voltage T P32 40 V TP32A 60 V TP32B 80 v TP32C 100 V VCEO CollectorEmitter Voltage TP32 40 V TP32A 60 V TP32B 80 v TP32C 100 V VEBO EmitterBase Voltage 5 V Ic Collector Current DC 3 A Icp Collector Current Pulse 5 A la Base Current 3 A PC Collector Dissipation Tc25 C 40 W PC Collector Dissipation Ta25 C 2 W TJ Junction Temperature 150 C TSTG Storage Temperature 65 150 C Electrical Characteristics Tc25 C unless otherwise noted Symbol Parameter Test Condition Min Max Units VCEosus CollectorEmitter Sustaining Voltage TP32 Ic 30mA IB 0 40 V TP32A 60 V TP32B 80 v TP32C 100 V ICEO Collector Cutoff Current TIP3232A vCE 30v IB 0 03 mA TIP32B32C VCE 60V IB 0 03 mA ICES Collector Cutoff Current TIP32 vCE 40v VEB 0 200 A TP32A VCE 60V VEB 0 200 pA TIP32B vCE 80V VEB 0 200 A TIP32C VCE 100VVCE 0 200 pA IEBO Emitter Cutoff Current VEB 5V Ic 0 1 mA hFE DC Current Gain VCE 4V Ic 1A 25 VCE4VIc3A 10 50 VCEsat CollectorEmitter Saturation Voltage Ic 3A IB 375mA 12 V VBEsat BaseEmitter Saturation Voltage VCE 4V Ic 3A 18 V fT Current Gain Bandwidth Product VCE 10V Ic 500mA 30 MHz Pulse Test PW3 Ops Duty Cycle 2 mun Falmhlld Semlcundu ctur lntematlunal Rev A February mun OZSEZSVZSZSdIJ99198 ZSdll Typical Characteristics chr4v lt I R z m m m 3 O O D 1 n 1n 1nn 1n n icimAL COLLECTOR CURRENT Figure 1 DC current Gain E z m m m 3 O x O R O m 4 4 O 0 g VEEWL COLLECTORrEMiTTER VOLTAGE Figure 3 Safe Operating Area VBE53L VESatmv SATURATTON VOLTAGE ROWER DTSSTRATT ON PciW ici iEI ch at 1 n in 1 icmA COLLECTOR CURRENT Figure 2 BaseEmitter Saturation Voltage CollectorEmitter Saturation Voltage TquotC CASE TEMPERATURE Figure 4 Power Derating nun Faimhiid Semiconductor internationai Rev A February ZDUEI OZSEZSVZSZSdlibel3998 ZSdll 920 0 20 o m o co 0 0 Package Demensions TO220 E 1000111 N 450 in 2H 130 3 A 050 53 240 EI 2n Dimensions in Millimeters mun Fawmh d Semmunductur mernatmna Rev A February mun OZSEZSVZSZSdlibel3998 ZSdll TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEXTM HiSeCTM SuperSOTTMB BottomlessTM ISOPLANARTM SyncFETTM CooIFETTM MICROWIRETM TinyLogicTM CROSSVOL TM POPTM UHCTM E2CMOSTM PowerTrench vchM FACTTM QFETTM FACT Quiet SeriesTM QSTM FAST Quiet SeriesTM FASTrTM SuperSOTTM3 GTOTM SuperSOTTM e DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user 2 A critical component is any component of a life support device or s s em whose failure to perform can reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status De nition Advance Information Formative or In Design This datasheet contains the design speci cations for product development Speci cations may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at anytime without notice in order to improve design No Identification Needed Full Production This datasheet contains nal speci cations Fairchild Semiconductor reserves the right to make changes at anytime without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only ZDUEI Fairchild Semiconductor International
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