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by: Hailey Halvorson
Hailey Halvorson
GPA 3.8


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Class Notes
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This 8 page Class Notes was uploaded by Hailey Halvorson on Thursday October 22, 2015. The Class Notes belongs to PHYS 20 at University of California Santa Barbara taught by Staff in Fall. Since its upload, it has received 28 views. For similar materials see /class/227148/phys-20-university-of-california-santa-barbara in Physics 2 at University of California Santa Barbara.

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Date Created: 10/22/15
January 2000 National Semiconductor LM386 Low Voltage Audio Power Amplifier Features Battery operation Minimum external parts Wide supply voltage range Low quiescent current drain Voltage gains from 20 to 200 Ground referenced input Selfcentering output quiescent voltage Low distortion Available in 8 pin MSOP package General Description The LM386 is a power amplifier designed for use in low volt age consumer applications The gain is internally set to 20 to keep external part count low but the addition of an external resistor and capacitor between pins 1 and 8 will increase the I I I 4V 12V or 5V 18V gain to any value up to 200 I I I I 4mA The inputs are ground referenced while the output is auto matically biased to one half the supply voltage The quies cent power drain is only 24 milliwatts when operating from a 6 volt supply making the LM386 ideal for battery operation Applications I AMFM radio amplifiers l Portable tape player amplifiers I Intercoms l TV sound systems I Line drivers I Ultrasonic drivers I Small servo drivers I Power converters Equivalent Schematic and Connection Diagrams 6 V Small Outline 3 Molded Mini Small Outline 15k 6 and DuallnLine Packages 7 BYPASS O 1 U 8 GAIN GAIN 15k CABIN GA1N 15k 5 lNPUT 2 7 BYPASS ANY 9 0 VOUT gt NPUT 3 6 vS 2 3 NPUT O O INPUT cm L 5 you 50k 50k DSOO69762 7 1 k1 Top View 6 a 4 Order Number LM386M1 LM386MM1 LM386N1 LM386N3 or LM386N4 See NS Package Number M08A MUA08A or N08E EN 0 DSOO69761 2000 National Semiconductor Corporation DSOO6976 wwwnationalcom Jeundwv JeMOd oipnv 66mm MO39I 988W39l LM386 Absolute Maximum Ratings Note 2 DualInLine Package If MilitaryAerospace specified devices are required SOIdering 10 sec 260 C please contact the National Semiconductor Sales Office Small Outline Package Distributors for availability and specifications SOC and MSOP Suppy Voitage Vapor Phase 60 sec 215 C LM386N1 3 LM386M1 15V Infrared 15 sec 220 C SUPP V quotage WSW4 22V i ep t 3 ril u millM21283Sliollilg e Package Drssrpatron Note 3 surface mount devices LM386N 125W Thermal Resistance LM386M 073vv 9J0 DIP WoeW LM386MM1 0 595W eJA DIP 107 CNV Input Voltage 104V 9J0 50 package 35oCW Storage Temperature 65 C to 150 C 9M 50 package 172oCW Operating Temperature 0 C to 70 C 9M MSOP moveW Junction Temperature 150 C 9J0 MSOP 56 CW Soldering Information Electrical Characteristics Notes 1 2 TA 25 C Parameter Conditions Min Typ Max Units Operating Supply Voltage VS LM386N1 3 LM386M1 LM386MM1 4 12 V LM386N4 5 18 V Quiescent Current IQ VS 6V VIN 0 4 8 mA Output Power POUT LM386N1 LM386M1 LM386MM1 VS 6V RL 89 THD 10 250 325 mW LM386N3 VS 9V RL 89 THD 10 500 700 mW LM386N4 VS 16V RL 329 THD 10 700 1000 mW Voltage Gain AV vS 6V r 1 kHz 26 dB 10 pF from Pin 1 to 8 46 dB Bandwidth BW VS 6V Pins 1 and 8 Open 300 kHz Total Harmonic Distortion THD VS 6V RL 89 POUT 125 mW 02 f 1 kHz Pins 1 and 8 Open Power Supply Rejection Ratio PSRR VS 6V f 1 kHz CBYPASS 10 pF 50 dB Pins 1 and 8 Open Referred to Output Input Resistance RIN 50 k9 Input Bias Current IBIAS VS 6V Pins 2 and 3 Open 250 nA Opera ing Ratings indicate condi ionsfor which the device is func ional 39 quot quot 39 39 39 39 39 39 panihulal quot 39 antee speci c performance limits This assumes that the device is within the Operating Ra ings Speci cations are not guaranteed for parameters where no limit is g39ven however the typical value is a good indication of device performance Note 3 For operation in ambient temperatures above 2539C the device must be derated based on a 15039C maximum junction temperature and 1 a thermal resis tance of 10739CNII junction to ambient for the dualinIine package and 2 a hermal resistance of 17039CNII for the small outline package vrmwnationalcom 2 Application Hints GAIN CONTROL To make the LM386 a more versatile ampli er two pins 1 and 8 are provided for gain control V th pins 1 and 8 open the 135 kg resistor sets the gain at 20 26 dB If a capacitor is put from pin 1 to 8 bypassing the 135 kg resistor the gain will go up to 200 46 dB If a resistor is placed in series with the capacitor the gain can be set to any value from 20 to 200 Gain control can also be done by capacitively cou pling a resistor or FET from pin 1 to ground Additional external components can be placed in parallel with the internal feedback resistors to tailor the gain and fre quency response for individual applications For example we can compensate poor speaker bass response by fre quency shaping the feedback path This is done with a series RC from pin 1 to 5 paralleling the internal 15 k9 resistor For 6 dB effective bass boost R E 15 k9 the lowest value for good stable operation is R 10 k9 if pin 8 is open If pins 1 and 8 are bypassed then R as low as 2 k9 can be used This restriction is because the amplifier is only compensated for closedloop gains greater than 9 INPUT BIASING The schematic shows that both inputs are biased to ground with a 50 k9 resistor The base current of the input transis tors is about 250 nA so the inputs are at about 125 mV when left open If the dc source resistance driving the LM386 is higher than 250 kg it will contribute very little additional offset about 25 mV at the input 50 mV at the output If the dc source resistance is less than 10 k9 then shorting the unused input to ground will keep the offset low about 25 mV at the input 50 mV at the output For dc source resistances between these values we can eliminate excess offset by put ting a resistor from the unused input to ground equal in value to the dc source resistance Of course all offset prob lems are eliminated if the input is capacitively coupled When using the LM386 with higher gains bypassing the 135 kg resistor between pins 1 and 8 it is necessary to by pass the unused input preventing degradation of gain and possible instabilities This is done with a 01 pF capacitor or a short to ground depending on the dc source resistance on the driven input AMANnationalcom 982W39l LM386 Quiescent Supply Current vs Supply Voltage 60 50 a 3 40 E 5 u 30 D d g 20 gt 10 0 100 20 18 16 14 12 10 08 06 04 02 0 DEVICE DISSIPATION W 6 A 5 lt E Z 4 I g I 3 U gt 3 J 2 a 2 1 4 5 6 7 8 9 10 11 12 SUPPLY VOLTAGE VOLTS 1k 10k 01 DSOO69765 Voltage Gain vs Frequency 100k 1M FREQUENCY Hz DSOO697614 Device Dissipation vs Output Power 4Q Load vs 3 8 VS 9V 3THD LEVEL 10 THO LEVEL Vs6V 02 03 O UTPUT POWER W DSOO697617 04 L5 Typical Performance Characteristics Power Supply Rejection Ratio Referred to the Output vs Frequency POWER SUPPLY REJECTION dB 60 50 40 30 20 10 llHHm C7 m OpF l L V56V y W AV 05uF YPASS CAPACITOR ll 10 100 1k 10k FREQUENCY Hz 100k DSOO697612 Distortion vs Frequency TOTAL HARMONIC OISTORTION 20 18 16 14 12 10 08 06 04 02 0 v5 6V RL80 Pom 125 mW AV 26081 0 20 50 100 200 5001k 2k 5k 10k FREQUENCY Hz 20k DSOO697615 Device Dissipation vs Output Power 89 Load DEVICE DISSIPATION W 20 18 16 14 12 10 08 06 04 02 0 V 9V V 6V I 10 THO LEVEL 3 THO LEVEL 0 01 02 03 04 05 06 07 08 09 10 OUTPUT POWER W DSOO697618 PeaktoPeak Output Voltage Swing vs Supply Voltage OUTPUT VOLTAGE VOLTS PEAKTOPEAK 10 r339 W 8 15 A 5 2 0 4 5 5 7 3 9101112 SUPPLY VOLTAGE VOLTS DSOO697613 Distortion vs Output Power TOTAL HARMONIC DISTORTION Va 10 v v 9 5 6 RL832 3 I1kHz 7 6 5 4 3 2 1 0 0001 001 POWER OUT WATTS DSOO697616 01 10 Device Dissipation vs Output Power 16S Load DEVICE DISSIPATION W 10 04 02 l l Vs 15quot 394nm mI LEVEL l I I I I l Vs12V g 10THD I LEVEL if I I I4 vls9v Vs6V l 0 02 04 05 08 10 12 14 16 18 20 OUTPUT POWER W DSOO697619 wwwnationacom TYPical Applications Amplifier with Gain 20 Minimum Parts Amplifier with Gain 200 VS 10M 2 250M I ZfioplF i LM386 VIN 5 I I 7 3 10k 39 ODEmi 4 I BYPASS 10 T L T DSOO69764 DSOO69763 Amplifier with Gain 50 Low Distortion Power Wienbridge Oscillator 390 ELDEMA CFS2158 c 3v 15 mA DSOO69766 f 1 392 DSOO69767 Amplifier with Bass Boost Square Wave Oscillator 30k 2 01uF 39 I Va 3 RL mo 7 1k DSOO6976 8 f 1 kHz DSOO69769 wwwnationacom 989W39l LM386 Typical Applications Continued Frequency Response with Bass Boost 27 26 25 24 23 22 21 20 19 18 17 VOLTAGE GAIN dB 20 50 100200 500 1k 2k 5k 10k 20k FREQUENCY Hz D800697610 AM Radio Power Amplifier FROM DETECTOR FERRITE BEAD 89 SPEAKER D800697611 Note 4 Note 5 Note 6 Note 7 Note 8 Twist Supply lead and supply ground very ightly Twist speaker lead and ground very ightly Ferrite bead in Ferroxcube K5OO1OO13B with 3 turns of wire R1C1 band limits input signals All components must be spaced very closely to IC wwwnationalcom 6 Physical Dimensions inches millimeters unless otherwise noted 0010 0020 X450 02544503 0150 0157 3010 3388 Lm 039008 o39mu ALL LEAD TIPS 0203 0254 TYP ALL LEADS 8 MAX TYP ALL LEADS t 0016 0050 m TYP ALL LEADS 8 0189 0197 LBW 5004 7 M 0220 0244 5791 6198 0 l LEAD N0 1 IDENT 0053 0069 1346 1153 l i4 f 0014 0050 0356 gt 1 270 TYP SO Package M Order Number LM386M1 NS Package Number M08A 0 Equot 3 4 0000 W 3 020 m MAX 0254 30 7 TYP 0004 0010 0102 0254 PLANE SEATING 0014 0020 TYP 0356 0500 MOBA REV H wwwnationalcom 98W39I LM386 0118i0004 3l01 gt 8 5 0118l0004 0193lz0004 Bio 1 4901 PIN1L 4 v IDENT NOTE 2 00256 TYP 065 A ll 0043 109 MAX A WI Q 0002005 A A 0004 0012 0002Typ L 3 00020006 TYP 006015 0002 005 B c Physical Dimensions inches millimeters unless otherwise noted Continued 39 0016 lt 041 TYPTT 00256 055 TYP LAND PATTERN RECOMMENDATION 0005 R TYP 013 GAGE PLANE R 0005 TYP 013 0010 00210005 j 053012 0060 TYP M375 lt SEATING PLANE 0953 00070002 O18i005 TYP MUAOBA REV B 8Lead 0118 Wide Molded Mini Small Outline Package Order Number LM386MM1 NS Package Number MUA08A wwwnationalcom 8


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