Advanced Electronics ECE 410
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This 1 page Class Notes was uploaded by Fredy Okuneva on Thursday October 22, 2015. The Class Notes belongs to ECE 410 at University of Idaho taught by Suat Ay in Fall. Since its upload, it has received 14 views. For similar materials see /class/227718/ece-410-university-of-idaho in ELECTRICAL AND COMPUTER ENGINEERING at University of Idaho.
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Date Created: 10/22/15
University of Idaho MOSFET EQUATIONS W 1 2 IDS y C I VG VT VD E VDS LINEARTRIODE current 1 W 2 IDS E 1 CM I VGS VTH 2 0 SATURATION Current 1 W 2 IDS 3 C0X I VG VTH 11VDS 2 0 SATURATION Current VTH VTH0 7 LID151 VSB 1I ZCDF Threshold voltage VTH0 VFB 12ltIgtFl 712ltIgtFl Zero backgate bias threshold voltage 2 N M GAMMA Body effect parameter COX ox 8 345 fFum2 Unit gate oxide capacitance t t nm e 107 xi 2 E 7 Channellength modulation coef c1ent q NA L LNA gm 31 gm u C0X VG VTH 1 xi VDS Transconductance vgs W gm Z n Cox Zj lns 1V VDS gm Z Iun Cax 39 391DSAT for A VDS ltlt1 A V03 VTH aim 1 W 2 0 711 C0X i VG VTH l E 1 IDS Output conductance BVDS 2 L r i output resistance 0 go 1 IDS gm aim 7 gm 7 A where n is 0 lt 7 lt1 Backgate transconductance avBS Q 2J12 gtFl VSB Dr S Ay Fall 2007 ECE410 MOSFET Equations
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