Special Topics EECS 598
Popular in Course
Popular in Engineering Computer Science
This 16 page Class Notes was uploaded by Ophelia Ritchie on Thursday October 29, 2015. The Class Notes belongs to EECS 598 at University of Michigan taught by Pc Ku in Fall. Since its upload, it has received 35 views. For similar materials see /class/231527/eecs-598-university-of-michigan in Engineering Computer Science at University of Michigan.
Reviews for Special Topics
Report this Material
What is Karma?
Karma is the currency of StudySoup.
Date Created: 10/29/15
Lecture 11 Quantum Confinement EECS 598002 Winter 2006 Nanophotonics and Nanoscale Fabrication PCKu I Schedule for the rest of the semester Introduction to lightmatter interaction 126 How to determine 8r The relationship to basic excitations Basic excitations and measurement of sr 131 Structure dependence of sr overview 22 Surface effects 27 Surface EM wave Surface polaritons Size dependence Case studies 29 216 Quantum wells wires and dots Nanophotonics in microscopy Nanophotonics in plasmonics Dispersion engineering 221 37 Material dispersion Waveguide dispersion photonic crystals EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu I Quantum confinement review gE Density of states dot W39 39 2D 1D OD 9E 9E 9E 9E Eg E E9 E E9 7 E E9 E EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu I Quantum wells and double heterostructures Recombination of electron and hole pairs generate radiation EECS 598002 Nanophotonics and Nanosoale Fabrication by PCKu I Quantum well lasers gt V Free Spectral Range V V EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu I DFB vs DBR structures NVWNWbW Distributed Feedback Distributed Bragg Reflector DFB DBR i EECS 598002 Nanophotonics and Nanoscaie Fabrication by PCKu 6 I Cross section of DFB Lasers Buried heterostructure 5 Dielectric layer p contact electrode InGaAsP cap layer DFB grating n contact electrode Active region Longitudinal direction 3 VtI 39V 2 x x InP a g nGaAsP 3931 lnGaAsP or g B Ik 339 it M t t quotnuquot 39quotGW S E U mg 9 quantum we u tlpe quantum we Fix 1 Schematic View of z ridgrwaveguidc dismbuted l V l X a u E c E m u 9 o E EECS 598002 Nanophotonios and Nanosoale Fabrication by PCKu I Semiconductor superlattice V Suhsl39ae Ref Prasad chapter 4 gures 10 and 11 EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu I Intersubband transition Intersubband transition can be used to generate or detect midinfrared radiation 10 pm 390ner Ref H Page et ai Appi Phys Lett 73 2001 3529 EECS EBEVUUZ Nanupnumnics and Nanuscaie Fabrication by P C Ku 9 I Quantum confined Stark effect QCSE ALnTRANSWSSmN 4 42 1 as 1 s FHOYON ENERGV 9W no 2 Mmpmm wean an quumlm well magma s I mum at elecde eld appiied wwdeu m m lly s 1 lnudgm pa mudon 1 V an mi m 19 Vcm Ind w I Rx m Vcm 1b 1mm polariuuan perpznaiw I no lD Vcm m W m Vcm1v sgtltw Vcm 22x O Vcm fulds m mcmmm mm c Vmeuurememx Ref J S Weiner et al Appl Phys Lett 47 1985 1148 EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu 10 I 2D plasmons realization FREQUENCY cmquot 1352 m uam m 2 n5 o alcmz Ref 8 J Allen et al Phys Rev Lett 38 1977 980 EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu 11 Increase of quantum confinement in indirect emiconductors Confinement of electrons and holes in a small volume increase the possibly allowed Ak and therefore enhances the emission efficiency of an indirect semiconductor eg silicon 18 16 3 1 6 PLlntensilyFilm 395 39 PLlntensilySolulion 4 g 14 39 39 39me Film 12 g 12 39 E I 10 1o a o z t 08 5 3 g 06 s l E 04 4 3 02 2 o o 2 Ref w D Kirkey et al MRS 500 600 700 800 900 1000 1100 I Wavelength nm Figure 2 CW Emission and photolumines cence lifetime 400 nm excitation of a silicon nanoparticle sample when embedded in PMMA and when dispersed in chloroform solution The lifetimes were obtained using a singleexponential fit EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu 12 I Quantum dot lasers Reduction of threshold current Reduction of temperature dependence 9 uncooed operation Increase in differential gain Better highspeed Smaller linewidth enhancement factor performance IO 1 1 0awln51nsInp mm 1g ma E Y Arakawa and A 5 5 H Sakaki Appl E g Phys Left 40 We aquot 1982 939 g 5 r a 10mm 7 5 g r V Wampum E M Asada et al J Quantum Elec 22 1986 1915 740 20 D 20 40 60 EECS 598002 Nanophotonics and Nanoscale Fal 13 temperature I 39C I or linewidth enhancement factor Change of carrier density eg due to amplitude modulation 9 change in absorptiongain 9 change in refractive index via Kramers Kronig relation 6Rea6N a2 lms6N Ref J Oksanen and J Tulkki J Appl Phys 94 2003 3 1983 a n t0 nquot n mum EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu I Quantum optics in semiconductor QD s Rabi oscillation Vg i 51223 l I l 5 E i l gi g i DT a u 47 51 1 27 31 Pulse Area rad FIG 3 a Measured DT Vs ump eld amplitude for r 105 s and T 185 s sislem with Rabi oscillalions 1 0 investigmion b Calculated DT for an 5 Kobe delay my eluding A Continuum of delocalized excitons in lhe dynamics Ref T H Stievateret al Phys Rev Lett 87 2001 133603 EECS 598002 Nanophotonics and Nanoscale Fabrication by PCKu Quantum dot biosensors R ET uorescence Excnanun energy transfer 435 nm Emwssimv CyE mum a c v Znang etar Nature Mat 4 2005826 EECS EBEVEIEIZ Nanuphutumcs and Nanuscahe Fabncatmn by F39 C Ku 16