Microelectronic Circuits ECE 3040
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This 0 page Class Notes was uploaded by Cassidy Effertz on Monday November 2, 2015. The Class Notes belongs to ECE 3040 at Georgia Institute of Technology - Main Campus taught by William Doolittle in Fall. Since its upload, it has received 8 views. For similar materials see /class/233887/ece-3040-georgia-institute-of-technology-main-campus in ELECTRICAL AND COMPUTER ENGINEERING at Georgia Institute of Technology - Main Campus.
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Date Created: 11/02/15
Lecture 11 PN Junction Diodes Part 1 How do they work postponing the math Reading Pierret 52 Our First Device pn Junction Diode J A pn junction diode is made by forming a ptype region of material directly next to a ntype region Our First Device pn Junction Diode ND39NA ND NA Junction In regions far away from the junction the band diagram looks like E Ec c Ef E E Ef E Our First Device pn Junction Diode But When the device has no external applied forces no current can ow T us the ferrnilevel must be at I We can then ll in the junction region ofthe band diagram as E E E at Ef Ev E1 E OI Our First Device pn Junction Diode Our First Device pn Junction Diode Electrostatic Potential vlt1qltEcEmf VB or the built in p oten al X Our First Device pn Junction Diode Electrostatic Potential V1DEcEre9 VB or the built in p oten al X Electnc Field EdVdx Our First Device pn Junction Diode Poisson s Equation Electric Field Charge Density NOT resistivity 0 s a 0 dE or in 1D K580 VIE Permittivity of free space Relative Permittivity of Semiconductor previously referred to as 5R pqpenNDNA Our First Device pn Junction Diode Electtic Field EdVdx
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