Microelectronics Tech ECE 6450
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This 0 page Class Notes was uploaded by Cassidy Effertz on Monday November 2, 2015. The Class Notes belongs to ECE 6450 at Georgia Institute of Technology - Main Campus taught by Staff in Fall. Since its upload, it has received 6 views. For similar materials see /class/233930/ece-6450-georgia-institute-of-technology-main-campus in ELECTRICAL AND COMPUTER ENGINEERING at Georgia Institute of Technology - Main Campus.
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Date Created: 11/02/15
Photolithograph y Benjamin A Small Cleanroom Technical Staff October 25th 2000 Outline 0 Chemistry 0 Spinning o Mechanics o Exposing 0 Procedure 0 Comments Chemistry diazoquinone novolac DQN positive photoresist CH2 1 O OH N2 so2 CH3 CH 2 OH CCH32 CH2 CH3 6 novolac solvent diazoquinone Chemistry Mechanics g 436nm h 405 nm i 365 nm Procedure Clean substrate Primer HMDS 0 Spin 0 Evaporate Photoresist 0 Spin 0 Softbake 9O 115 0C 1 2 min 0 Prebake 9O 110 0C O 10 min Exposure 0 Postbake 9O 115 0C O 2 min Develop 0 Rinse Hardbake 100 120 0C 10 60 min 6 Spinning IMICHOPOSIT 313W PHOTO RESIST UNDVED SERIES Figure 1 Spin Spam Curves 354100 6 5152 51818 5 mm sum 3 a 51311 E 25000 I 305 9 E 2mm 395 a 1m k n O E moun 50391 M U I l u l I Jun 2000 30013 1030 5000 8000 70m EDGE SPIN SPEENFIMI 7 Hmme thickness 39EIJIr39I Spinning Spin tum Pram um MitchV 9 1th M quot lll3 umm 14 a D I 9 1pm l39lhuwu ndi39l Hm mkknull ml Spinning AE 5214E Lat DQQX1 Spin Speed Cuwe 1m mm m 5m 5m Bgu a nud mm MJB3 right MJB3 left MABA6 OAI Exposing 155 w CP 195 w c1 455 w CP 475 w c1 275 w 745 mWcm2 365 nm 5 mWcmz 175 010 008 J 5 006 9 004 002 215 Relative Intensities 265 315 65 415 w avelength nm MJB3 R MJB3 L MABA6 10 MICEDPOSFI39 Figure 4 lnlerl erence C exmsune DOSE E ImamIII 50 Exposing 31813 and 31813 J2 PHOTO RESISTS UNIS I o 6D I 31813 E 51813J2 I I l I I I 1GSODI I DOCH150012MIZW0130W1350014UUD PHOTOHESIEr THICKNESS A 436 nm AZ Resists 120 mJcm2 365 nm Exposing overexposed underexposed overdeveloped underdeveloped rounded corners thin lines wide corners thin spaces Warnings Photoresists are suspected carcinogens and are toxic in large doses Prolonged exposure to UV light can cause retinal damage Negative developers are also carcinogenic and highly toxic Hotplates and ovens are hot Recommendations Photoresist thickness should be less than the critical dimension Only spin resists on clean planar surfaces Check lamp intensity often Examine features after developing Avoid darkfield masks Use good alignment marks
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