In a dynamic random access memory (DRAM)computer chip,
Chapter 24, Problem 24.10(choose chapter or problem)
In a dynamic random access memory (DRAM)computer chip, each memory cell chiefly consists of a capacitorfor charge storage. Each of these cells represents asingle binary-bit value of 1 when its 35-fF capacitor(l fF = 10-15 F) is charged at 1.5 V, or 0 when uncharged at0 V. (a) When it is fully charged, how many excess electronsare on a cell capacitors negative plate? (b) After charge hasbeen placed on a cell capacitors plate, it slowly leaks off(through a variety of mechanisms) at a constant rate of0.30 fC/s. How long does it take for the potential differenceacross this capacitor to decrease by 1 .0% from its fullycharged value? (Because of this leakage effect, the charge ona DRAM capacitor is refreshed many times per second.)
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