Answer: For an arsenic donor atom in a doped silicon
Chapter 40, Problem 40.83(choose chapter or problem)
For an arsenic donor atom in a doped silicon semiconductor,assume that the extra electron moves in a Bohrorbit about the arsenic ion. For this electron in the groundstate, take into account the dielectric constant K = 12 ofthe Si lattice (which represents the weakening of theCoulomb force due to all the other atoms or ions in thelattice), and estimate (a) the binding energy, and (b) theorbit radius for this extra electron. [Hint: Substitutee = ^ e 0 in Coulombs law; see Section 24-5.]
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