For intrinsic semiconductors, the intrinsic carrier
Chapter 18, Problem 18.19(choose chapter or problem)
For intrinsic semiconductors, the intrinsic carrier concentration ni depends on temperature, as follows: ni expa - Eg 2kTb (18.35a) or, taking natural logarithms, lnni - Eg 2kT (18.35b) Thus, a plot of lnni versus 1/T (K)1 should be linear and yield a slope of Eg/2k. Using this information and the data presented in Figure 18.16, determine the band gap energies for silicon and germanium and compare these values with those given in Table 18.3.
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