For intrinsic semiconductors, the intrinsic carrier

Chapter 18, Problem 18.19

(choose chapter or problem)

For intrinsic semiconductors, the intrinsic carrier concentration ni depends on temperature, as follows: ni expa - Eg 2kTb (18.35a) or, taking natural logarithms, lnni - Eg 2kT (18.35b) Thus, a plot of lnni versus 1/T (K)1 should be linear and yield a slope of Eg/2k. Using this information and the data presented in Figure 18.16, determine the band gap energies for silicon and germanium and compare these values with those given in Table 18.3.

Unfortunately, we don't have that question answered yet. But you can get it answered in just 5 hours by Logging in or Becoming a subscriber.

Becoming a subscriber
Or look for another answer

×

Login

Login or Sign up for access to all of our study tools and educational content!

Forgot password?
Register Now

×

Register

Sign up for access to all content on our site!

Or login if you already have an account

×

Reset password

If you have an active account we’ll send you an e-mail for password recovery

Or login if you have your password back