Holes are being steadily injected into a region of ntype

Chapter 3, Problem 3.10

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Holes are being steadily injected into a region of ntype silicon (connected to other devices, the details of which are not important for this question). In the steady state, the excess-hole concentration profile shown in Fig. P3.10 is established in the n-type silicon region. Here excess means over and above the thermal-equilibrium concentration (in the absence of hole injection), denoted . If , , , and W = 0.1 m, find the density of the current that will flow in the x direction.

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