Consider the BiCMOS amplifier shown in Fig. P9.104. The BJT has = 200, C = 0.8 pF, and fT = 600 MHz. The NMOS transistor has Vt = 1 V, and Cgs = Cgd = 1 pF. (a) Consider the dc bias circuit. Neglect the base current of Q2 in determining the current in Q1. Find the dc bias currents in Q1 and Q2, and show that they are approximately 100 A and 1 mA, respectively.(b) Evaluate the small-signal parameters of Q1 and Q2 at their bias points. (c) Consider the circuit at midband frequencies. First, determine the small-signal voltage gain Vo/Vi. (Note that RG can be neglected in this process.) Then use Millers theorem on RG to determine the amplifier input resistance Rin. Finally, determine the overall voltage gain Vo/Vsig. (d) Consider the circuit at low frequencies. Determine the frequency of the poles due to C1 and C2, and hence estimate the lower 3-dB frequency, fL. (e) Consider the circuit at higher frequencies. Use Millers theorem to replace RG with a resistance at the input. (The one at the output will be too large to matter.) Use open-circuit time constants to estimate fH. (f) To considerably reduce the effect of RG on Rin and hence on amplifier performance, consider the effect of adding another 10-M resistor in series with the existing one and placing a large bypass capacitor between their joint node and ground. What will Rin, AM, and fH become?

ECE 3301 Homework Assignment 1 1. The current flowing past a point in a device is shown in the given figure, where A = 15. Calculate the total charge through the point. The current entering the positive terminal of a device is i(t) = 9 e mA and the voltage across the device is v(t) = 7 V. 2. Find the charge delivered to the device between t = 0 and t = 2 s. 3. Calculate the power absorbed by the device. 4. Determine the energy absorbed in 3 s. 5. Consider the network given below, where I = 11 A and I = 5 2. Calculate the power absorbed by each element in the given network. 6. A 1kW toaster takes roughly 4 minutes to heat four slices of bread. Find the cost