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Consider the BiCMOS amplifier shown in Fig. P9.104. The

Microelectronic Circuits | 6th Edition | ISBN: 9780195323030 | Authors: Adel S. Sedra ISBN: 9780195323030 147

Solution for problem 9.104 Chapter 9

Microelectronic Circuits | 6th Edition

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Microelectronic Circuits | 6th Edition | ISBN: 9780195323030 | Authors: Adel S. Sedra

Microelectronic Circuits | 6th Edition

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Problem 9.104

Consider the BiCMOS amplifier shown in Fig. P9.104. The BJT has = 200, C = 0.8 pF, and fT = 600 MHz. The NMOS transistor has Vt = 1 V, and Cgs = Cgd = 1 pF. (a) Consider the dc bias circuit. Neglect the base current of Q2 in determining the current in Q1. Find the dc bias currents in Q1 and Q2, and show that they are approximately 100 A and 1 mA, respectively.(b) Evaluate the small-signal parameters of Q1 and Q2 at their bias points. (c) Consider the circuit at midband frequencies. First, determine the small-signal voltage gain Vo/Vi. (Note that RG can be neglected in this process.) Then use Millers theorem on RG to determine the amplifier input resistance Rin. Finally, determine the overall voltage gain Vo/Vsig. (d) Consider the circuit at low frequencies. Determine the frequency of the poles due to C1 and C2, and hence estimate the lower 3-dB frequency, fL. (e) Consider the circuit at higher frequencies. Use Millers theorem to replace RG with a resistance at the input. (The one at the output will be too large to matter.) Use open-circuit time constants to estimate fH. (f) To considerably reduce the effect of RG on Rin and hence on amplifier performance, consider the effect of adding another 10-M resistor in series with the existing one and placing a large bypass capacitor between their joint node and ground. What will Rin, AM, and fH become?

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ECE 3301 Homework Assignment 1 1. The current flowing past a point in a device is shown in the given figure, where A = 15. Calculate the total charge through the point. The current entering the positive terminal of a device is i(t) = 9 e mA and the voltage across the device is v(t) = 7 V. 2. Find the charge delivered to the device between t = 0 and t = 2 s. 3. Calculate the power absorbed by the device. 4. Determine the energy absorbed in 3 s. 5. Consider the network given below, where I = 11 A and I = 5 2. Calculate the power absorbed by each element in the given network. 6. A 1­kW toaster takes roughly 4 minutes to heat four slices of bread. Find the cost

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Chapter 9, Problem 9.104 is Solved
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Textbook: Microelectronic Circuits
Edition: 6
Author: Adel S. Sedra
ISBN: 9780195323030

Microelectronic Circuits was written by and is associated to the ISBN: 9780195323030. This full solution covers the following key subjects: consider, Circuit, determine, amplifier, Frequencies. This expansive textbook survival guide covers 15 chapters, and 1344 solutions. The answer to “Consider the BiCMOS amplifier shown in Fig. P9.104. The BJT has = 200, C = 0.8 pF, and fT = 600 MHz. The NMOS transistor has Vt = 1 V, and Cgs = Cgd = 1 pF. (a) Consider the dc bias circuit. Neglect the base current of Q2 in determining the current in Q1. Find the dc bias currents in Q1 and Q2, and show that they are approximately 100 A and 1 mA, respectively.(b) Evaluate the small-signal parameters of Q1 and Q2 at their bias points. (c) Consider the circuit at midband frequencies. First, determine the small-signal voltage gain Vo/Vi. (Note that RG can be neglected in this process.) Then use Millers theorem on RG to determine the amplifier input resistance Rin. Finally, determine the overall voltage gain Vo/Vsig. (d) Consider the circuit at low frequencies. Determine the frequency of the poles due to C1 and C2, and hence estimate the lower 3-dB frequency, fL. (e) Consider the circuit at higher frequencies. Use Millers theorem to replace RG with a resistance at the input. (The one at the output will be too large to matter.) Use open-circuit time constants to estimate fH. (f) To considerably reduce the effect of RG on Rin and hence on amplifier performance, consider the effect of adding another 10-M resistor in series with the existing one and placing a large bypass capacitor between their joint node and ground. What will Rin, AM, and fH become?” is broken down into a number of easy to follow steps, and 242 words. Since the solution to 9.104 from 9 chapter was answered, more than 472 students have viewed the full step-by-step answer. This textbook survival guide was created for the textbook: Microelectronic Circuits, edition: 6. The full step-by-step solution to problem: 9.104 from chapter: 9 was answered by , our top Engineering and Tech solution expert on 11/15/17, 04:00PM.

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Consider the BiCMOS amplifier shown in Fig. P9.104. The