(a) Consider a CMOS inverter fabricated in a deepsubmicron
Chapter 13, Problem 13.63(choose chapter or problem)
(a) Consider a CMOS inverter fabricated in a deepsubmicron technology utilizing transistors with the minimum allowed channel length and having an equivalent load capacitance C. Let rise instantaneously to and assume that turns off and turns on immediately. Ignoring channel-length modulation, that is, , and assuming operates in the velocity-saturation region, show that (b) Using the equivalent resistance of show that (c) If the formulas in (a) and (b) are to yield the same result, find for the NMOS transistor for a 0.13-m technology characterized by , , and
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