Quantum-mechanical tunneling can be important in
Chapter 40, Problem 40.23(choose chapter or problem)
Quantum-mechanical tunneling can be important in semiconductors. Consider a 1.0-nm-thick layer of GaAs sandwiched between 4.0-nm-thick layers of GaAlAs. This is the situation explored in Figure 40.16, where we learned that the electrons potential energy is 0.300 eV lower in GaAs than in GaAlAs. An electron in the GaAs layer can tunnel through the GaAlAs to escape, but this doesnt happen instantly. In quantum mechanics, we cant predict exactly when tunneling will occur, only the probability of it happening. Estimate the time at which the probability of escape has reached 50%.
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