Transistor gain between emitter and collector in an

Chapter , Problem 7.36

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Transistor gain between emitter and collector in an integrated circuit device (hFE) is related to two variables (Myers, Montgomery, and Anderson-Cook, 2009) that can be controlled at the deposition process, emitter drive-in time (x1, in minutes) and emitter dose (x2, in ions 1014). Fourteen samples were observed following deposition, and the resulting data are shown in the following table. We will consider linear regression models using gain as the response and emitter drive-in time or emitter dose as the regressor variable. (a) Determine if emitter drive-in time influences gain in a linear relationship. That is, test H0: 1 = 0, where 1 is the slope of the regressor variable. (b) Do a lack-of-fit test to determine if the linear relationship is adequate. Draw conclusions. (c) Determine if emitter dose influences gain in a linear relationship. Which regressor variable is the better predictor of gain? x1 (drive-in x2 (dose, y (gain, Obs. time, min) ions 1014) or hFE) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 195 255 195 255 255 255 255 195 255 255 255 255 255 340 4.00 4.00 4.60 4.60 4.20 4.10 4.60 4.30 4.30 4.00 4.70 4.30 4.72 4.30 1004 1636 852 1506 1272 1270 1269 903 1555 1260 1146 1276 1225 1321