Plasma etching is essential to the fine-line pattern transfer incurrent semiconductor

Chapter 12, Problem 52

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Plasma etching is essential to the fine-line pattern transfer incurrent semiconductor processes. The article Ion Beam-Assisted Etching of Aluminum with Chlorine (J. of theElectrochem. Soc., 1985: 2010 2012) gives the accompanyingdata (read from a graph) on chlorine flow (x, inSCCM) through a nozzle used in the etching mechanismand etch rate (y, in 100 A/min)."The summary statistics are.a. Does the simple linear regression model specify a usefulrelationship between chlorine flow and etch rate?b. Estimate the true average change in etch rate associatedwith a 1-SCCM increase in flow rate using a 95% confidenceinterval, and interpret the interval.c. Calculate a 95% CI for , the true average etch ratewhen flow Has this average been preciselyestimated?d. Calculate a 95% PI for a single future observation onetch rate to be made when . Is the predictionlikely to be accurate?e. Would the 95% CI and PI when be wider ornarrower than the corresponding intervals of parts(c) and (d)? Answer without actually computing theintervals.f. Would you recommend calculating a 95% PI for a flowof 6.0? Explain."