For an NMOS transistor with L = 0.3 m fabricated in the 0.18-m process specified in
Chapter 8, Problem 8.33(choose chapter or problem)
For an NMOS transistor with L = 0.3 m fabricated in the 0.18-m process specified in Table J.1 in Appendix J, find gm, ro, and A0 obtained when the device is operated at ID = 100 A with VOV = 0.2 V. Also, find W.
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