The circuit in Fig. 8.15(a) is fabricated in a 0.18-m CMOS technology for which nCox =

Chapter 8, Problem 8.41

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The circuit in Fig. 8.15(a) is fabricated in a 0.18-m CMOS technology for which nCox = 400 A/V2 , pCox = 100 A/V2 , Vtn = Vtp = 0.5 V, V An = 5 V/m, V Ap = 5 V/m, and VDD = 1.8 V. It is required to design the circuit to obtain a voltage gain Av = 40 V/V. Use devices of equal length L operating at I = 100 A and VOV = 0.25 V. Determine the required values of VG, L, (W/L)1, and (W/L)2. 8

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