Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1V, Vtn =
Chapter 14, Problem 14.31(choose chapter or problem)
Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1V, Vtn = Vtp = 0.35 V, and nCox = 2.5pCox = 470 A/V2 . In addition, QN and QP have L = 65 nm and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH , VOL, VIH , VIL, NML, and NMH . (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.
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