(a) For NMOS transistors fabricated in the 0.18-m technology specified in Table G.1
Chapter 0, Problem G.1(choose chapter or problem)
(a) For NMOS transistors fabricated in the 0.18-m technology specified in Table G.1, find the range of ID obtained for active-mode operation with VOV ranging from 0.2 V to 0.4 V and W/L = 0.1 to 100. Neglect channel-length modulation. (b) If a similar range of current is required in an npn transistor fabricated in the low-voltage process specified in Table G.2, find the corresponding change in its VBE.
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