For an NMOS transistor fabricated in the 0.5-m process specified in Table G.1 with W = 5
Chapter 0, Problem G.2(choose chapter or problem)
For an NMOS transistor fabricated in the 0.5-m process specified in Table G.1 with W = 5 m and L = 0.5 m, find the transconductance and the intrinsic gain obtained atID = 10 A, 100 A, and 1 mA.
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