Consider NMOS and PMOS devices fabricated in the 0.25-m process specified in Table G.1
Chapter 0, Problem G.4(choose chapter or problem)
Consider NMOS and PMOS devices fabricated in the 0.25-m process specified in Table G.1. If both devices are to operate at VOV = 0.25 V and ID = 100 A, what must their W/L ratios be?
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