For an NMOS transistor with L = 1 m fabricated in the 0.8-m process specified in Table
Chapter 0, Problem G.10(choose chapter or problem)
For an NMOS transistor with L = 1 m fabricated in the 0.8-m process specified in Table G.1, find gm, ro, and A0 if the device is operated with VOV = 0.5 V and ID = 100 A. Also, find the required device width W.
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