For an ideal p-n junction rectifier with a sharp boundary

Chapter , Problem 40

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For an ideal p-n junction rectifier with a sharp boundary between its two semiconducting sides, the current I is related to the potential difference V across the rectifier by I ! I0(eeV/kT # 1), where I0, which depends on the materials but not on I or V, is called the reverse saturation current. The potential difference V is positive if the rectifier is forward-biased and negative if it is backbiased. (a) Verify that this expression predicts the behavior of a junction rectifier by graphing I versus V from #0.12 V to '0.12 V. Take T ! 300 K and I0 ! 5.0 nA. (b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.