In this problem, we contrast two BJT integrated-circuit
Chapter 6, Problem 6.6(choose chapter or problem)
In this problem, we contrast two BJT integrated-circuit fabrication technologies: For the old technology, a typical npn transistor has A, and for the new technology a typical npn transistor has A. These typical devices have vastly different junction areas and base width. For our purpose here we wish to determine the required to establish a collector current of 1 mA in each of the two typical devices. Assume active-mode operation.
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