Consider an NMOS transistor fabricated in the 0.5-m process specified in Table G.1. Let
Chapter 0, Problem G.20(choose chapter or problem)
Consider an NMOS transistor fabricated in the 0.5-m process specified in Table G.1. Let L = 0.5 m and VOV = 0.3 V. If the MOSFET is connected as a common-source amplifier with a load capacitance CL = 1 pF (as in Fig. G.2a), find the required transistor width W and bias current ID to obtain a unity-gain bandwidth of 100 MHz. Also, find A0 and f3 dB.
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