Solved: One method for growing thin silicon sheets for

Chapter , Problem 1.42

(choose chapter or problem)

Get Unlimited Answers
QUESTION:

One method for growing thin silicon sheets for photovoltaic solar panels is to pass two thin strings of high melting temperature material upward through a bath of molten silicon. The silicon solidifies on the strings near the surface of the molten pool, and the solid silicon sheet is pulled slowly upward out of the pool. The silicon is replenished by supplying the molten pool with solid silicon powder. Consider a silicon sheet that is Wsi 85 mm wide and tsi 150 m thick that is pulled at a velocity of Vsi 20 mm/min. The silicon is melted by supplying electric power to the cylindrical growth chamber of height H 350 mm and diameter D 300 mm. The exposed surfaces of the growth chamber are at Ts 320 K, the corresponding convection coefficient at theexposed surface is h 8 W/m2 K, and the surface is characterized by an emissivity of s 0.9. The solid silicon powder is at Tsi,i 298 K, and the solid silicon sheet exits the chamber at Tsi,o 420 K. Both the surroundings and ambient temperatures are T Tsur 298 K. (a) Determine the electric power, Pelec, needed to operate the system at steady state. (b) If the photovoltaic panel absorbs a time-averaged solar flux of 180 W/m2 and the panel has a conversion efficiency (the ratio of solar power absorbed to electric power produced) of 0.20, how long must the solar panel be operated to produce enough electric energy to offset the electric energy that was consumed in its manufacture?

Questions & Answers

QUESTION:

One method for growing thin silicon sheets for photovoltaic solar panels is to pass two thin strings of high melting temperature material upward through a bath of molten silicon. The silicon solidifies on the strings near the surface of the molten pool, and the solid silicon sheet is pulled slowly upward out of the pool. The silicon is replenished by supplying the molten pool with solid silicon powder. Consider a silicon sheet that is Wsi 85 mm wide and tsi 150 m thick that is pulled at a velocity of Vsi 20 mm/min. The silicon is melted by supplying electric power to the cylindrical growth chamber of height H 350 mm and diameter D 300 mm. The exposed surfaces of the growth chamber are at Ts 320 K, the corresponding convection coefficient at theexposed surface is h 8 W/m2 K, and the surface is characterized by an emissivity of s 0.9. The solid silicon powder is at Tsi,i 298 K, and the solid silicon sheet exits the chamber at Tsi,o 420 K. Both the surroundings and ambient temperatures are T Tsur 298 K. (a) Determine the electric power, Pelec, needed to operate the system at steady state. (b) If the photovoltaic panel absorbs a time-averaged solar flux of 180 W/m2 and the panel has a conversion efficiency (the ratio of solar power absorbed to electric power produced) of 0.20, how long must the solar panel be operated to produce enough electric energy to offset the electric energy that was consumed in its manufacture?

ANSWER:


(a) The electric power, Pelec, can be determined using the energy balance equation for the growth chamber.

Pelec = (4?D H h Ts4) – WsiVsi((Tsi,o – Tsi,i) + (Tsi,o4 – Tsi,i4) / (4*s*?*Tsur4))

Pelec = (4?

Add to cart


Study Tools You Might Need

Not The Solution You Need? Search for Your Answer Here:

×

Login

Login or Sign up for access to all of our study tools and educational content!

Forgot password?
Register Now

×

Register

Sign up for access to all content on our site!

Or login if you already have an account

×

Reset password

If you have an active account we’ll send you an e-mail for password recovery

Or login if you have your password back