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Engineering and Tech / Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7 / Chapter 7 / Problem 7.77

Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) | 7th Edition | ISBN: 9780199339136 | Authors: Adel S. Sedra, Kenneth C. Smith

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A CG amplifier using an NMOS transistor for which gm = 2 mA/V has a 5-k drain resistance

Chapter 7, Problem 7.77

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QUESTION:

A CG amplifier using an NMOS transistor for which gm = 2 mA/V has a 5-k drain resistance RD and a 5-k load resistance RL. The amplifier is driven by a voltage source having a 750- resistance. What is the input resistance of the amplifier? What is the overall voltage gain Gv ? By what factor must the bias current ID of the MOSFET be changed so that Rin matches Rsig? 7.

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QUESTION:

A CG amplifier using an NMOS transistor for which gm = 2 mA/V has a 5-k drain resistance RD and a 5-k load resistance RL. The amplifier is driven by a voltage source having a 750- resistance. What is the input resistance of the amplifier? What is the overall voltage gain Gv ? By what factor must the bias current ID of the MOSFET be changed so that Rin matches Rsig? 7.

ANSWER:

Step 1 of 5

MOSFET is an integrated device, fabricated by VLSI using planner technology. It is a voltage controlled device.

In the MOSFET the plate and semiconductor channel will be working as the plate of capacitor and as dielectric.

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