Annealing, an important step in semiconductor materi-als | StudySoup

Textbook Solutions for Fundamentals of Heat and Mass Transfer

Chapter 1 Problem 1.55

Question

Annealing, an important step in semiconductor materi-als processing, can be accomplished by rapidly heatingthe silicon wafer to a high temperature for a short period of time. The schematic shows a method involv-ing the use of a hot plate operating at an elevated tem-perature Th. The wafer, initially at a temperature of Tw,i,is suddenly positioned at a gap separation distance Lfrom the hot plate. The purpose of the analysis is tocompare the heat fluxes by conduction through the gaswithin the gap and by radiation exchange between thehot plate and the cool wafer. The initial time rate ofchange in the temperature of the wafer, (dTw/dt)i, is alsoof interest. Approximating the surfaces of the hot plateand the wafer as blackbodies and assuming their diame-ter Dto be much larger than the spacing L, the radiativeheat flux may be expressed as The silicon wafer has a thickness of d?0.78 mm, adensity of 2700 kg/m3, and a specific heat of 875J/kg?K. The thermal conductivity of the gas in the gapis 0.0436 W/m?K.q?rad??(T4h?T4w).transfer modes and the effect of the gap distance onthe heating process. Under what conditions could awafer be heated to 900C in less than 10 s?

Solution

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The first step in solving 1 problem number 55 trying to solve the problem we have to refer to the textbook question: Annealing, an important step in semiconductor materi-als processing, can be accomplished by rapidly heatingthe silicon wafer to a high temperature for a short period of time. The schematic shows a method involv-ing the use of a hot plate operating at an elevated tem-perature Th. The wafer, initially at a temperature of Tw,i,is suddenly positioned at a gap separation distance Lfrom the hot plate. The purpose of the analysis is tocompare the heat fluxes by conduction through the gaswithin the gap and by radiation exchange between thehot plate and the cool wafer. The initial time rate ofchange in the temperature of the wafer, (dTw/dt)i, is alsoof interest. Approximating the surfaces of the hot plateand the wafer as blackbodies and assuming their diame-ter Dto be much larger than the spacing L, the radiativeheat flux may be expressed as The silicon wafer has a thickness of d?0.78 mm, adensity of 2700 kg/m3, and a specific heat of 875J/kg?K. The thermal conductivity of the gas in the gapis 0.0436 W/m?K.q?rad??(T4h?T4w).transfer modes and the effect of the gap distance onthe heating process. Under what conditions could awafer be heated to 900C in less than 10 s?
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Title Fundamentals of Heat and Mass Transfer 7 
Author Theodore L. Bergman; Adrienne S. Lavine; Frank P. Incropera; David P. DeWitt
ISBN 9780470501979

Annealing, an important step in semiconductor materi-als

Chapter 1 textbook questions

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