A transistor, which may be approximated as a | StudySoup

Textbook Solutions for Fundamentals of Heat and Mass Transfer

Chapter 3 Problem 3.77

Question

A transistor, which may be approximated as a hemi-spherical heat source of radius ro?0.1 mm, is embed-ded in a large silicon substrate (k?125 W/m?K) anddissipates heat at a rate q. All boundaries of the siliconare maintained at an ambient temperature of T??27C,except for the top surface, which is well insulated.Obtain a general expression for the substrate tempera-ture distribution and evaluate the surface temperatureof the heat source for q?4W.

Solution

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The first step in solving 3 problem number 77 trying to solve the problem we have to refer to the textbook question: A transistor, which may be approximated as a hemi-spherical heat source of radius ro?0.1 mm, is embed-ded in a large silicon substrate (k?125 W/m?K) anddissipates heat at a rate q. All boundaries of the siliconare maintained at an ambient temperature of T??27C,except for the top surface, which is well insulated.Obtain a general expression for the substrate tempera-ture distribution and evaluate the surface temperatureof the heat source for q?4W.
From the textbook chapter One-Dimensional, Steady-State Conduction you will find a few key concepts needed to solve this.

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full solution

Title Fundamentals of Heat and Mass Transfer 7 
Author Theodore L. Bergman; Adrienne S. Lavine; Frank P. Incropera; David P. DeWitt
ISBN 9780470501979

A transistor, which may be approximated as a

Chapter 3 textbook questions

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