As seen in .109, silicon carbide nanowires ofdiameter D15 | StudySoup

Textbook Solutions for Fundamentals of Heat and Mass Transfer

Chapter 3 Problem 3.145

Question

As seen in 3.109, silicon carbide nanowires ofdiameter D?15 nm can be grown onto a solid siliconcarbide surface by carefully depositing droplets of cata-lyst liquid onto a flat silicon carbide substrate. Siliconcarbide nanowires grow upward from the depositeddrops, and if the drops are deposited in a pattern, anarray of nanowire fins can be grown, forming a siliconcarbide nano-heat sink. Consider finned and unfinnedelectronics packages in which an extremely small, 10?m10?m electronics device is sandwichedbetween two d?100-nm-thick silicon carbide sheets. Inboth cases, the coolant is a dielectric liquid at 20C. Aheat transfer coefficient of h?1 105W/m2?K existson the top and bottom of the unfinned package and on allsurfaces of the exposed silicon carbide fins, which areeach L?300 nm long. Each nano-heat sink includes a200200 array of nanofins. Determine the maximumallowable heat rate that can be generated by the elec-tronic device so that its temperature is maintained at Tt?85C for the unfinned and finned packages.

Solution

Step 1 of 3)

The first step in solving 3 problem number 145 trying to solve the problem we have to refer to the textbook question: As seen in 3.109, silicon carbide nanowires ofdiameter D?15 nm can be grown onto a solid siliconcarbide surface by carefully depositing droplets of cata-lyst liquid onto a flat silicon carbide substrate. Siliconcarbide nanowires grow upward from the depositeddrops, and if the drops are deposited in a pattern, anarray of nanowire fins can be grown, forming a siliconcarbide nano-heat sink. Consider finned and unfinnedelectronics packages in which an extremely small, 10?m10?m electronics device is sandwichedbetween two d?100-nm-thick silicon carbide sheets. Inboth cases, the coolant is a dielectric liquid at 20C. Aheat transfer coefficient of h?1 105W/m2?K existson the top and bottom of the unfinned package and on allsurfaces of the exposed silicon carbide fins, which areeach L?300 nm long. Each nano-heat sink includes a200200 array of nanofins. Determine the maximumallowable heat rate that can be generated by the elec-tronic device so that its temperature is maintained at Tt?85C for the unfinned and finned packages.
From the textbook chapter One-Dimensional, Steady-State Conduction you will find a few key concepts needed to solve this.

Step 2 of 7)

Visible to paid subscribers only

Step 3 of 7)

Visible to paid subscribers only

Subscribe to view the
full solution

Title Fundamentals of Heat and Mass Transfer 7 
Author Theodore L. Bergman; Adrienne S. Lavine; Frank P. Incropera; David P. DeWitt
ISBN 9780470501979

As seen in .109, silicon carbide nanowires ofdiameter D15

Chapter 3 textbook questions

×

Login

Organize all study tools for free

Or continue with
×

Register

Sign up for access to all content on our site!

Or continue with

Or login if you already have an account

×

Reset password

If you have an active account we’ll send you an e-mail for password recovery

Or login if you have your password back